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6ED2230S12TXUMA1

Name: Infineon 6ED2230S12TXUMA1
Brand: Infineon Technologies
SKU: 726-6ED2230S12TXUMA1
Price: 6.32 SGD
Availability: OutOfStock

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Mouser No:

726-6ED2230S12TXUMA1

Mfr. No:

6ED2230S12TXUMA1

Mfr.:

Infineon Technologies

Description:

Gate Drivers 1200V, 0.65A 3-Phase BSD, OCP, EN & FAUL

Datasheet:

6ED2230S12TXUMA1 Datasheet (PDF)

ECAD Model:

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Stock:: 0

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$6.32	$6.32
	$4.72	$47.20
	$4.25	$106.25
	$3.88	$388.00
	$3.62	$905.00
	$3.50	$1,750.00
Full Reel (Order in multiples of 1000)
	$3.36	$3,360.00
	$3.33	$6,660.00
	$3.27	$16,350.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	DSO-24
Number of Drivers:	6 Driver
Number of Outputs:	6 Output
Output Current:	650 mA
Supply Voltage - Min:	13 V
Supply Voltage - Max:	20 V
Configuration:	Inverting
Rise Time:	35 ns
Fall Time:	20 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	Infineon SOI
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Logic Type:	CMOS
Maximum Turn-Off Delay Time:	600 ns
Maximum Turn-On Delay Time:	600 ns
Moisture Sensitive:	Yes
Operating Supply Current:	175 uA
Pd - Power Dissipation:	1.3 W
Product Type:	Gate Drivers
Propagation Delay - Max:	900 ns
Shutdown:	Shutdown
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Part # Aliases:	6ED2230S12T SP001656578
Unit Weight:	807.300 mg

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Datasheet

6ED2230S12TXUMA1 Datasheet (PDF)

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CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

6ED223xS12T EiceDRIVER™ Gate Driver ICs

Infineon Technologies 6ED223xS12T EiceDRIVER™ Level Shift Gate Driver ICs are high voltage (up to 1200V), high-speed insulated-gate bipolar transistors (IGBTs) with three independent high-side and low-side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable a ruggedized monolithic construction. Logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. This resistor can also derive an over‐current protection (OCP) function that terminates all six outputs.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.