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Image: Product 726-IMBG65R039M1HXTM Product 726-IMBG65R040M2HXTM
Mouser Part No: 726-IMBG65R039M1HXTM 726-IMBG65R040M2HXTM
Mfr.'s Part No: IMBG65R039M1HXTMA1 IMBG65R040M2HXTMA1
Manufacturer: Infineon Technologies Infineon Technologies
Description: SiC MOSFETs SILICON CARBIDE MOSFET SiC MOSFETs SILICON CARBIDE MOSFET
Lifecycle: Not Recommended for New Designs -
Datasheet: IMBG65R039M1HXTMA1 Datasheet (PDF) IMBG65R040M2HXTMA1 Datasheet (PDF)
RoHS:    

Specifications

Brand: Infineon Technologies Infineon Technologies
Channel Mode: Enhancement Enhancement
Country of Assembly: Not Available Not Available
Country of Diffusion: Not Available Not Available
Country of Origin: MY MY
Id - Continuous Drain Current: 54 A 49 A
Maximum Operating Temperature: + 175 C + 175 C
Minimum Operating Temperature: - 55 C - 55 C
Mounting Style: SMD/SMT SMD/SMT
Number of Channels: 1 Channel 1 Channel
Packaging: Reel Reel
Pd - Power Dissipation: 211 W 197 W
Product: MOSFETs -
Product Type: SiC MOSFETS SiC MOSFETS
Qg - Gate Charge: 41 nC 28 nC
Rds On - Drain-Source Resistance: 51 mOhms 49 mOhms
Series: CoolSiC 650V -
Standard Pack Qty: 1000 1000
Subcategory: Transistors Transistors
Technology: SiC SiC
Tradename: CoolSiC -
Transistor Polarity: N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage: 650 V 650 V
Vgs - Gate-Source Voltage: - 5 V, + 23 V - 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage: 5.7 V 5.6 V
Part # Aliases: IMBG65R039M1H SP005539169 IMBG65R040M2HXTMA1 SP005917207
Fall Time: - 4.6 ns
Package/Case: - TO-263-7
Rise Time: - 8.3 ns
Typical Turn-Off Delay Time: - 14.4 ns
Typical Turn-On Delay Time: - 8.4 ns

Ordering Information

Stock: Non-Stocked
Factory Lead Time: 52 Weeks Estimated factory production time. -
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Pricing:
Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
$7.44 $7,440.00