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CDMSJ22013.8-650 SL

Name: Central Semiconductor CDMSJ22013.8-650 SL
Brand: Central Semiconductor
SKU: 610-CDMSJ220138650SL
Price: 5.86 SGD
Availability: InStock

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Mouser No:

610-CDMSJ220138650SL

Mfr. No:

CDMSJ22013.8-650 SL

Mfr.:

Central Semiconductor

Description:

MOSFETs 13.8A,650V Through-Hole MOSFET N-Channel Super Junction T/L

Datasheet:

CDMSJ22013.8-650 SL Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Central Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	13.8 A
Rds On - Drain-Source Resistance:	280 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	30 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	35.7 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Central Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	66 ns
Forward Transconductance - Min:	13 S
Product Type:	MOSFETs
Rise Time:	69 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	N-Channel Super Junction Power MOSFET
Typical Turn-Off Delay Time:	171 ns
Typical Turn-On Delay Time:	43 ns

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Datasheet

CDMSJ22013.8-650 SL Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CDMSJ N-Channel Super Junction MOSFETs

Central Semiconductor CDMSJ N-Channel Super Junction MOSFETs offer high current, high blocking voltage, and 650V drain-source voltage. This MOSFET combines high voltage capability with low R_DS(ON), low threshold voltage, and low gate charge. Typical applications include Power Factor Correction (PFC), solar power inverters, electric vehicle inverters, and Switch Mode Power Supplies (SMPS).