EPC2308

EPC
65-EPC2308
EPC2308

Mfr.:

Description:
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN

Lifecycle:
New At Mouser
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 5,699

Stock:
5,699 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$7.46 $7.46
$4.96 $49.60
$3.55 $355.00
$3.40 $1,700.00
$3.22 $3,220.00
Full Reel (Order in multiples of 3000)
$2.76 $8,280.00

Product Attribute Attribute Value Select Attribute
EPC
Product Category: GaN FETs
RoHS:  
GaN
- 40 C
+ 150 C
SMD/SMT
QFN-7
Brand: EPC
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Id - Continuous Drain Current: 63 A
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Packaging: Reel
Packaging: Cut Tape
Product: Power Transistor
Product Type: GaN FETs
Qg - Gate Charge: 11.7 nC
Rds On - Drain-Source Resistance: 6 mOhms
Factory Pack Quantity: 3000
Subcategory: Transistors
Tradename: eGaN FET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Voltage: 6 V, - 4 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Unit Weight: 30.300 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290040
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99