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AIMZA75R007M2HXKSA1

Name: Infineon AIMZA75R007M2HXKSA1
Brand: Infineon Technologies
SKU: 726-AIMZA75R007M2HXK
Price: 51.22 SGD
Availability: InStock

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Mouser No:

726-AIMZA75R007M2HXK

Mfr. No:

AIMZA75R007M2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs Automotive SiC MOSFET, 750 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMZA75R007M2HXKSA1 Datasheet (PDF)

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$51.22	$51.22
	$41.91	$419.10
	$37.04	$3,704.00
1,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	PG-TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	172 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 11 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	169 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	10 ns
Forward Transconductance - Min:	78 S
Packaging:	Tube
Product:	Power MOSFET
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	CoolSiC Automotive Power Device
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	AIMZA75R007M2H SP006113236

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Datasheet

AIMZA75R007M2HXKSA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of R_DS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.