It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

FP10R12W1T7BOMA1

Name: Infineon FP10R12W1T7BOMA1
Brand: Infineon Technologies
SKU: 726-FP10R12W1T7BOMA1
Price: 56.16 SGD
Availability: OutOfStock

Mouser No:

726-FP10R12W1T7BOMA1

Mfr. No:

FP10R12W1T7BOMA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules EASY

Datasheet:

FP10R12W1T7BOMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies FP10R12W1T7BOMA1

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 12 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$56.16	$56.16
	$45.93	$459.30
	$40.58	$4,869.60

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	3-Phase Inverter
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.6 V
Continuous Collector Current at 25 C:	10 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Product Type:	IGBT Modules
Series:	Trenchstop IGBT7
Factory Pack Quantity:	24
Subcategory:	IGBTs
Technology:	Si
Tradename:	EasyPIM
Part # Aliases:	FP10R12W1T7 SP005351582

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FP10R12W1T7BOMA1 Datasheet (PDF)

Product Catalogs

CNHTS:: 8504409100
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.

TRENCHSTOP™ IGBT7 Discretes & Modules

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable-speed drives. If only half of all industrial drives had electric speed control, 20% of energy or 17 million tons of CO2 could be saved. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.

EasyPIM™ IGBT Module

Infineon Technologies EasyPIM™ IGBT Module is a 3-phase input rectifier PIM IGBT module with TRENCHSTOP™ IGBT7, emitter controlled 7 diode, and NTC/PressFIT technology. This module features enhanced controllability of dv/dt, improved FWD softness, optimised switching losses, and 8µs short-circuit robustness. The EasyPIM (Power Integrated Module) is very small in size, which helps in attaining higher power density. This module lowers system cost and losses to meet energy efficiency requirements. Typical applications include auxiliary inverters, air conditioning, servo motors, and heating ventilation and air conditioning (HVAC).