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IPBE65R190CFD7AATMA1

Name: Infineon IPBE65R190CFD7AATMA1
Brand: Infineon Technologies
SKU: 726-IPBE65R190CFD7A1
Price: 6.54 SGD
Availability: InStock

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Mouser No:

726-IPBE65R190CFD7A1

Mfr. No:

IPBE65R190CFD7AATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Datasheet:

IPBE65R190CFD7AATMA1 Datasheet (PDF)

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In Stock: 860

Stock:: 860 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 860 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$6.54	$6.54
	$4.26	$42.60
	$3.33	$333.00
	$2.79	$1,395.00
Full Reel (Order in multiples of 1000)
	$2.59	$2,590.00
	$2.43	$4,860.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	77 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Product Type:	MOSFETs
Series:	CoolMOS CFD7A
Factory Pack Quantity:	1000
Subcategory:	Transistors
Part # Aliases:	IPBE65R190CFD7A SP005398486

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Datasheet

IPBE65R190CFD7AATMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.