PXAE263708NB-V1-R2

MACOM
941-PXAE263708NBV1R2
PXAE263708NB-V1-R2

Mfr.:

Description:
RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
Mouser does not presently sell this product in your region.

Availability

Stock:

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: RF MOSFET Transistors
Delivery Restriction:
 Mouser does not presently sell this product in your region.
RoHS:  
N-Channel
Si
65 V
80 mOhms
2.62 GHz to 2.69 GHz
13.5 dB
400 W
+ 225 C
Screw Mount
HB2SOF-8-1
Reel
Cut Tape
MouseReel
Brand: MACOM
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Number of Channels: 1 Channel
Product Type: RF MOSFET Transistors
Factory Pack Quantity: 250
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 6 V to + 10 V
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8541290000
USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.