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STB41N40DM6AG

Name: STMicroelectronics STB41N40DM6AG
Brand: STMicroelectronics
SKU: 511-STB41N40DM6AG
Price: 10.38 SGD
Availability: InStock

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Mouser No:

511-STB41N40DM6AG

Mfr. No:

STB41N40DM6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 400 V, 50 mOhm typ., 41 A MDmesh DM6 Power MOSFET in

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Datasheet:

STB41N40DM6AG Datasheet (PDF)

ECAD Model:

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In Stock: 1,389

Stock:: 1,389 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$10.38	$10.38
	$7.04	$70.40
	$5.28	$528.00
Full Reel (Order in multiples of 1000)
	$4.99	$4,990.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	41 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	STB41N40DM6AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	4 g

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Filter Document:

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.