It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STGB5H60DF

Name: STMicroelectronics STGB5H60DF
Brand: STMicroelectronics
SKU: 511-STGB5H60DF
Price: 0.71 SGD
Availability: Discontinued

Images are for reference only
See Product Specifications

Mouser No:

511-STGB5H60DF

Mfr. No:

STGB5H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STGB5H60DF Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGB5H60DF

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 15 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 2000 Multiples: 1000

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	$0.716	$1,432.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	D2PAK-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	10 A
Pd - Power Dissipation:	88 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGB5H60DF
Packaging:	Reel
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	10 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1.380 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGB5H60DF Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.