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STP7N80K5

Name: STMicroelectronics STP7N80K5
Brand: STMicroelectronics
SKU: 511-STP7N80K5
Price: 4.1 SGD
Availability: OutOfStock

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Mouser No:

511-STP7N80K5

Mfr. No:

STP7N80K5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 800V .95Ohm 6A MDmesh K5

Complete Your Design

Datasheet:

STP7N80K5 Datasheet (PDF)

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$4.10	$4.10
	$2.03	$20.30
	$1.83	$183.00
	$1.49	$745.00
	$1.39	$1,390.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	1.2 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	13.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IT
Fall Time:	20.2 ns
Product Type:	MOSFETs
Rise Time:	8.3 ns
Series:	STP7N80K5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	11.3 ns
Typical Turn-On Delay Time:	23.7 ns
Unit Weight:	2 g

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Datasheet

STP7N80K5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.