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CSD13381F4

Name: Texas Instruments CSD13381F4
Brand: Texas Instruments
SKU: 595-CSD13381F4
Price: 0.51 SGD
Availability: InStock

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Mouser No:

595-CSD13381F4

Mfr. No:

CSD13381F4

Mfr.:

Texas Instruments

Description:

MOSFETs 12V N-CH Pwr MOSFET A 595-CSD13381F4T A A 595-CSD13381F4T

Datasheet:

CSD13381F4 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD13381F4

In Stock: 4,184

Stock:: 4,184 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.515	$0.52
	$0.319	$3.19
	$0.202	$20.20
	$0.15	$75.00
	$0.119	$119.00
Full Reel (Order in multiples of 3000)
	$0.093	$279.00
	$0.084	$504.00
	$0.072	$648.00
	$0.07	$1,680.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD13381F4T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.93

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD13381F4T

Description:

MOSFETs 12V N-Ch FemtoFET MO SFET A 595-CSD13381 A 595-CSD13381F4

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	2.1 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	650 mV
Qg - Gate Charge:	1.06 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	3.8 ns
Product Type:	MOSFETs
Rise Time:	1.5 ns
Series:	CSD13381F4
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel FemtoFET MOSFET
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	3.7 ns
Unit Weight:	0.400 mg

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CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 854239099
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.