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CSD19538Q3A

Name: Texas Instruments CSD19538Q3A
Brand: Texas Instruments
SKU: 595-CSD19538Q3A
Price: 1.42 SGD
Availability: OutOfStock

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Mouser No:

595-CSD19538Q3A

Mfr. No:

CSD19538Q3A

Mfr.:

Texas Instruments

Description:

MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19538Q3AT

Datasheet:

CSD19538Q3A Datasheet

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More Information

Learn more about Texas Instruments CSD19538Q3A

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Stock:: 0

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On Order:: 14,578
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.42	$1.42
	$0.878	$8.78
	$0.573	$57.30
	$0.442	$221.00
	$0.399	$399.00
Full Reel (Order in multiples of 2500)
	$0.358	$895.00
	$0.315	$1,575.00
	$0.312	$3,120.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19538Q3AT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.75

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19538Q3AT

Description:

MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19538Q3A

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	14.4 A
Rds On - Drain-Source Resistance:	61 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	4.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.8 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	2 ns
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	CSD19538Q3A
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	5 ns
Unit Weight:	27.300 mg

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.