CSD23381F4

Texas Instruments
595-CSD23381F4
CSD23381F4

Mfr.:

Description:
MOSFETs 12V P-CH FemtoFET MO SFET A 595-CSD23381 A 595-CSD23381F4T

Datasheet:
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Learn more about Texas Instruments CSD23381F4

In Stock: 8,050

Stock:
8,050 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$0.486 $0.49
$0.326 $3.26
$0.199 $19.90
$0.143 $71.50
$0.117 $117.00
Full Reel (Order in multiples of 3000)
$0.096 $288.00
$0.086 $516.00
$0.073 $657.00
$0.072 $1,728.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
CSD23381F4T
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$1.92
Min:
1

Similar Product

Texas Instruments CSD23381F4T
Texas Instruments
MOSFETs 12V P-Ch FemtoFET MO SFET A 595-CSD23381 A 595-CSD23381F4
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
P-Channel
1 Channel
12 V
2.3 A
175 mOhms
- 8 V, 8 V
700 mV
1.14 nC
- 55 C
+ 150 C
500 mW
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 7 ns
Forward Transconductance - Min: 2 S
Product Type: MOSFETs
Rise Time: 3.9 ns
Series: CSD23381F4
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 4.5 ns
Unit Weight: 0.400 mg
Products found:
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Attributes selected: 0

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CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

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