It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD86350Q5D

Name: Texas Instruments CSD86350Q5D
Brand: Texas Instruments
SKU: 595-CSD86350Q5D
Price: 5.35 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD86350Q5D

Mfr. No:

CSD86350Q5D

Mfr.:

Texas Instruments

Description:

MOSFETs Synch Buck NexFET Pw r Block MOSFET

Datasheet:

CSD86350Q5D Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD86350Q5D

In Stock: 6,829

Stock:: 6,829 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$5.35	$5.35
	$3.50	$35.00
	$2.46	$246.00
	$2.17	$1,085.00
	$2.09	$2,090.00
Full Reel (Order in multiples of 2500)
	$2.03	$5,075.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD86350Q5DT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$6.79

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	5 mOhms, 1.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	10.7 nC, 25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	13 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Development Kit:	CSD86350Q5DEVM-604, TPS53219EVM-690
Fall Time:	2.3 ns, 21 ns
Forward Transconductance - Min:	103 S, 132 S
Product Type:	MOSFETs
Rise Time:	21 ns, 23 ns
Series:	CSD86350Q5D
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	9 ns, 24 ns
Typical Turn-On Delay Time:	8 ns, 9 ns
Unit Weight:	170 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CSD86350Q5D Datasheet

Images

Function Diagram

PCN

SPICE Models

CSD86350Q5D PSpice Model (Rev. A)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Power Block TI NexFET

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.