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LM5109BMA/NOPB

Name: Texas Instruments LM5109BMA/NOPB
Brand: Texas Instruments
SKU: 926-LM5109BMA/NOPB
Price: 1.66 SGD
Availability: InStock

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Mouser No:

926-LM5109BMA/NOPB

Mfr. No:

LM5109BMA/NOPB

Mfr.:

Texas Instruments

Description:

Gate Drivers 1A Peak Half Bridge

Datasheet:

LM5109BMA/NOPB Datasheet

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More Information

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In Stock: 4,202

Stock:: 4,202 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$1.66	$1.66
	$1.20	$12.00
	$0.962	$24.05
	$0.914	$86.83
	$0.889	$253.37
	$0.855	$487.35
	$0.829	$866.31
	$0.798	$2,046.87
	$0.779	$3,922.27

Alternative Packaging

Mfr. Part No.:

LM5109BMAX/NOPB

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	1 A
Supply Voltage - Min:	8 V
Supply Voltage - Max:	14 V
Rise Time:	15 ns
Fall Time:	15 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LM5109B
Packaging:	Tube
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Features:	Independent
Logic Type:	TTL
Maximum Turn-Off Delay Time:	2 ns
Maximum Turn-On Delay Time:	2 ns
Operating Supply Current:	1.8 mA
Product Type:	Gate Drivers
Propagation Delay - Max:	32 ns
Factory Pack Quantity:	95
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Unit Weight:	143 mg

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Datasheet

LM5109BMA/NOPB Datasheet

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399999
ECCN:: EAR99

LM5109B/LM5109B-Q1 Half Bridge Gate Drivers

Texas Instruments LM5109B/LM5109B-Q1 Half Bridge Gate Drivers are cost-effective, high-voltage gate drivers designed to drive both the high-side and the low-side N-Channel MOSFETs. This can be done in a synchronous buck or a half bridge configuration. The floating high-side drivers are capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean-level transitions from the control input logic to the high-side gate drivers. Under-voltage lockout is provided on both the low-side and the high-side power rails.