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LMG3411R050RWHT

Name: Texas Instruments LMG3411R050RWHT
Brand: Texas Instruments
SKU: 595-LMG3411R050RWHT
Price: 44.53 SGD
Availability: InStock

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Mouser No:

595-LMG3411R050RWHT

Mfr. No:

LMG3411R050RWHT

Mfr.:

Texas Instruments

Description:

Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHR

Datasheet:

LMG3411R050RWHT Datasheet

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More Information

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In Stock: 37

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$44.53	$44.53
	$36.05	$360.50
	$33.92	$848.00
	$31.59	$3,159.00
Full Reel (Order in multiples of 250)
	$30.47	$7,617.50
	$29.82	$14,910.00
1,000	Quote

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
REACH - SVHC:
Product:	MOSFET Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	VQFN-32
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	12 A
Supply Voltage - Min:	9.5 V
Supply Voltage - Max:	18 V
Configuration:	Non-Inverting
Rise Time:	2.9 ns
Fall Time:	26 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3411R050
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Maximum Turn-Off Delay Time:	8.9 ns
Maximum Turn-On Delay Time:	5.2 ns
Moisture Sensitive:	Yes
Operating Supply Current:	23 mA
Output Voltage:	5 V
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	57 mOhms
Factory Pack Quantity:	250
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	GaN
Unit Weight:	188.300 mg

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Datasheet

LMG3411R050RWHT Datasheet

Application Notes

PCN

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CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

LMG341xR050 GaN Power Stage

Texas Instruments LMG341xR050 GaN Power Stage with integrated driver and protection enables designers to achieve new power density levels and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem pole PFC.