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UCC21738QDWRQ1

Name: Texas Instruments UCC21738QDWRQ1
Brand: Texas Instruments
SKU: 595-UCC21738QDWRQ1
Price: 9.51 SGD
Availability: InStock

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Mouser No:

595-UCC21738QDWRQ1

Mfr. No:

UCC21738QDWRQ1

Mfr.:

Texas Instruments

Description:

Optically Isolated Gate Drivers Automotive 10-A sing le-channel isolated

Datasheet:

UCC21738QDWRQ1 Datasheet

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In Stock: 1,431

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2000)

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$9.51	$9.51
	$7.32	$73.20
	$6.78	$169.50
	$6.18	$618.00
	$5.89	$1,472.50
	$5.71	$2,855.00
	$5.56	$5,560.00
Full Reel (Order in multiples of 2000)
	$5.43	$10,860.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Optically Isolated Gate Drivers
RoHS:
Series:	UCC21738
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Channels:	1 Channel
Isolation Voltage:	5700 Vrms
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	985 mW
Propagation Delay - Max:	130 ns
Rise Time:	33 ns
Fall Time:	27 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	UCC21732QDWEVM-025
Input Voltage - Max:	5.5 V
Input Voltage - Min:	3 V
Moisture Sensitive:	Yes
Number of Outputs:	1 Channel
Operating Supply Current:	3 mA
Output Current:	10 A
Product:	Gate Drivers
Factory Pack Quantity:	2000
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	3 V
Technology:	SiC

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Datasheet

UCC21738QDWRQ1 Datasheet

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

UCC21738-Q1 Isolated Single-Channel Gate Driver

Texas Instrument UCC21738-Q1 Isolated Single-Channel Gate Driver is designed for IGBTs and SiC MOSFETs up to 2121V DC operating voltage. These devices have advanced protection features, best-in-class dynamic performance, and robustness. The device has up to ±10A peak source and sink currents. The input side is isolated from the output side with SiO₂ capacitive isolation technology. This feature supports up to 1.5kV_RMS working voltage and 12.8kV_PK surge immunity with longer than 40 years of isolation barrier life. It also provides low part-to-part skew and > 150V/ns common-mode transient immunity (CMTI).