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NSVMUN2132T1G

Name: onsemi NSVMUN2132T1G
Brand: onsemi
SKU: 863-NSVMUN2132T1G
Price: 0.31 SGD
Availability: InStock

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See Product Specifications

Mouser No:

863-NSVMUN2132T1G

Mfr. No:

NSVMUN2132T1G

Mfr.:

onsemi

Description:

Digital Transistors SS SC59 BR XSTR PNP 50V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NSVMUN2132T1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NSVMUN2132T1G

In Stock: 14,840

Stock:: 14,840 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$0.315	$0.32
	$0.292	$2.92
	$0.206	$20.60
	$0.129	$64.50
	$0.107	$107.00
Full Reel (Order in multiples of 3000)
	$0.061	$183.00
	$0.054	$324.00
	$0.047	$423.00
	$0.037	$888.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Digital Transistors
RoHS:
Configuration:	Single
Transistor Polarity:	PNP
Typical Input Resistor:	4.7 kOhms
Typical Resistor Ratio:	1.0
Mounting Style:	SMD/SMT
Package/Case:	SC-59
DC Collector/Base Gain hFE Min:	15
Collector- Emitter Voltage VCEO Max:	50 VDC
Continuous Collector Current:	100 mA
Pd - Power Dissipation:	338 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MUN2132
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Channel Mode:	Enhancement
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Maximum DC Collector Current:	100 mA
Operating Temperature Range:	- 55 C to + 150 C
Output Voltage:	4.9 V
Product Type:	Digital Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NSVMUN2132T1G Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

NPN Bipolar Digital Transistors

onsemi NPN Bipolar Digital Transistors are monolithic bias resistor networks designed to replace a single device and its external resistor bias network. These Bias Resistor Transistors (BRTs) are composed of two resistors: a series base resistor (22kΩ) and a base-emitter resistor (47kΩ). The BRT eliminates individual components and integrates them into a single device. This BRT is AEC-Q101 qualified and PPAP capable. The BRT is Pb and halogen/BFR-free and RoHS compliant. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.