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AA4040P3C-P22

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See Product Specifications

Mouser No:

604-AA4040P3C-P22

Mfr. No:

AA4040P3C-P22

Mfr.:

Kingbright

Description:

Phototransistors 4x4mm PHOTOTRANS RA SMD LED

Datasheet:

AA4040P3C-P22 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Kingbright AA4040P3C-P22

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Kingbright
Product Category:	Phototransistors
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Product:	Phototransistors
Package/Case:	SMD-2
Mounting Style:	SMD/SMT
Maximum On-State Collector Current:	600 uA
Collector- Emitter Voltage VCEO Max:	30 V
Collector-Emitter Breakdown Voltage:	30 V
Collector-Emitter Saturation Voltage:	800 mV
Dark Current:	100 nA
Rise Time:	15 us
Fall Time:	15 us
Pd - Power Dissipation:	100 mW (1/10 W)
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	Kingbright
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	Phototransistors
Factory Pack Quantity:	500
Subcategory:	Optical Detectors & Sensors
Type:	NPN
Wavelength:	940 nm
Part # Aliases:	KA-4040P3C
Unit Weight:	76.657 mg

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Filter Document:

CNHTS:: 8541410090
USHTS:: 8541497080
ECCN:: EAR99

AA4040 SMD LEDs

Kingbright AA4040 SMD LEDs are designed for all SMD assembly and solder processes. These LEDs are Halogen-free, RoHS compliant, and feature level 3 moisture sensitivity. The AA4040 SMD LEDs are available on tape and reel. These SMD LEDs are categorically available as IR LEDs, phototransistors, and standard LEDs. Typical applications include backlight, status indicator, home/smart appliances, wearable and portable devices, and healthcare.

NPN Si Phototransistors

Kingbright NPN Si Phototransistors are made with NPN silicon phototransistor chips. These phototransistors are mechanically and spectrally matched to infrared-emitting LED lamps. The NPN Si phototransistors operate at a temperature range from -40°C to +85°C. These phototransistors feature a maximum collector-to-emitter voltage of 30V and an emitter-to-collector voltage of 5V. Typical applications include infrared applied systems, optoelectronic switches, and photodetector control circuits.