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AFGHL25T120RWD

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See Product Specifications

Mouser No:

863-AFGHL25T120RWD

Mfr. No:

AFGHL25T120RWD

Mfr.:

onsemi

Description:

IGBTs FS7 1200V 25A SCR IGBT TO247 3L

Lifecycle:

New At Mouser

Datasheet:

AFGHL25T120RWD Datasheet

ECAD Model:

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More Information

Learn more about onsemi AFGHL25T120RWD

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.38 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	468 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	AFGHL25T120RWD
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current Ic Max:	25 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors

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Datasheet

AFGHL25T120RWD Datasheet

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.