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FFSP1065B

Name: onsemi FFSP1065B
Brand: onsemi
SKU: 863-FFSP1065B
Price: 5.59 SGD
Availability: InStock

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Mouser No:

863-FFSP1065B

Mfr. No:

FFSP1065B

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE 650V 10A

Datasheet:

FFSP1065B Datasheet

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More Information

Learn more about onsemi FFSP1065B

In Stock: 840

Stock:: 840 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$5.59	$5.59
	$2.85	$28.50
	$2.57	$257.00
	$2.16	$2,160.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	45 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSP1065B
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	75 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	3.698 g

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Datasheet

FFSP1065B Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.