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FGD5T120SH

Name: onsemi FGD5T120SH
Brand: onsemi
SKU: 512-FGD5T120SH
Price: 3.4 SGD
Availability: InStock

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Mouser No:

512-FGD5T120SH

Mfr. No:

FGD5T120SH

Mfr.:

onsemi

Description:

IGBTs 1200V 5A Field Stop Trench IGBT

Datasheet:

FGD5T120SH Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi FGD5T120SH

In Stock: 7,124

Stock:: 7,124 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.40	$3.40
	$2.19	$21.90
	$1.50	$150.00
	$1.19	$595.00
	$1.15	$1,150.00
Full Reel (Order in multiples of 2500)
	$1.10	$2,750.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	DPAK-3 (TO-252-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.9 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	10 A
Pd - Power Dissipation:	69 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	FGD5T120SH
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Continuous Collector Current Ic Max:	10 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	2500
Subcategory:	IGBTs
Unit Weight:	260.370 mg

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Datasheet

FGD5T120SH Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

1200V Field Stop Trench IGBTs

onsemi 1200V Field Stop Trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operates at high switching frequencies, and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. onsemi 1200V Field Stop Trench IGBTs are available in TO-247-3, TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.