+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

FGY4L75T120SWD

Name: onsemi FGY4L75T120SWD
Brand: onsemi
SKU: 863-FGY4L75T120SWD
Price: 14.76 SGD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

863-FGY4L75T120SWD

Mfr. No:

FGY4L75T120SWD

Mfr.:

onsemi

Description:

IGBTs 1200V 75A FS7 IGBT TP247-4L

Lifecycle:

New At Mouser

Datasheet:

FGY4L75T120SWD Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi FGY4L75T120SWD

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$14.76	$14.76
	$8.85	$88.50
	$7.95	$954.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.37 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	150 A
Pd - Power Dissipation:	652 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGY4L75T120SWD
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current Ic Max:	75 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FGY4L75T120SWD Datasheet

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

FGY4LxxT120SWD N-Channel 1200V IGBTs

onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs use the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO-247 4−lead package. The onsemi FGY4LxxT120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like solar inverter, UPS and ESS.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.