IDH06G65C5XKSA2

Infineon Technologies
726-IDH06G65C5XKSA2
IDH06G65C5XKSA2

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Description:
SiC Schottky Diodes SIC DIODES

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In Stock: 1,442

Stock:
1,442 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$4.12 $4.12
$2.12 $21.20
$1.92 $192.00
$1.52 $760.00
$1.49 $1,490.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
6 A
650 V
1.5 V
54 A
300 nA
- 55 C
+ 175 C
XDH06G65
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Pd - Power Dissipation: 62 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 500
Subcategory: Diodes & Rectifiers
Tradename: CoolSiC
Vr - Reverse Voltage: 650 V
Part # Aliases: IDH06G65C5 SP001632370
Unit Weight: 2 g
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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

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