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IMBG65R057M1HXTMA1

Name: Infineon IMBG65R057M1HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG65R057M1HXTM
Price: 11.35 SGD
Availability: InStock

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Mouser No:

726-IMBG65R057M1HXTM

Mfr. No:

IMBG65R057M1HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IMBG65R057M1HXTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMBG65R057M1HXTMA1

In Stock: 3,984

Stock:: 3,984

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On Order:: 2,000
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$11.35	$11.35
	$9.09	$90.90
	$7.35	$735.00
	$6.54	$3,270.00
Full Reel (Order in multiples of 1000)
	$5.79	$5,790.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IMBG65R050M2HXTMA1

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	39 A
Rds On - Drain-Source Resistance:	74 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.7 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	161 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	AT
Country of Origin:	AT
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFETs
Product Type:	SiC MOSFETS
Series:	CoolSiC 650V
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Part # Aliases:	IMBG65R057M1H SP005539175

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Datasheet

IMBG65R057M1HXTMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.