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IXYP60N65A5

Name: IXYS IXYP60N65A5
Brand: IXYS
SKU: 747-IXYP60N65A5
Price: 8.37 SGD
Availability: InStock

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Mouser No:

747-IXYP60N65A5

Mfr. No:

IXYP60N65A5

Mfr.:

IXYS

Description:

IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220

Datasheet:

IXYP60N65A5 Datasheet (PDF)

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Learn more about IXYS IXYP60N65A5

In Stock: 258

Stock:: 258 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$8.37	$8.37
	$4.62	$46.20
	$4.60	$460.00
	$3.90	$1,950.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	134 A
Pd - Power Dissipation:	395 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	60 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	50
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXYP60N65A5 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

650V XPT™ High Speed Trench IGBTs

IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

XPT™ GenX5™ Trench IGBTs

IXYS XPT™ GenX5™ Trench IGBTs are developed using proprietary XPT thin-wafer technology and state-of-the-art 5th generation (GenX5) Trench IGBT process. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The XPT GenX5 Trench IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and a 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. These IGBTs also include a positive collector-to-emitter voltage temperature coefficient, enabling designers to use multiple devices in parallel to meet high current requirements. The low gate charge of these devices helps reduce gate drive requirements and switching losses.

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