KTDM4G3C818BGIEAT

SMARTsemi
473-M4G3C818BGIEAT
KTDM4G3C818BGIEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 4GB 512MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM4G3C818BGIEAT

In Stock: 210

Stock:
210 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$17.88 $17.88
$16.60 $166.00
$16.09 $402.25
$15.70 $785.00
$15.33 $1,533.00
$14.81 $3,110.10
$14.44 $6,064.80
$14.09 $14,794.50
2,520 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
8 bit
933 MHz
FBGA-78
512 M x 8
1.283 V
1.575 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

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