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KTDM4G4B826BGIEAT

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See Product Specifications

Mouser No:

473-M4G4B826BGIEAT

Mfr. No:

KTDM4G4B826BGIEAT

Mfr.:

SMARTsemi

Description:

DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Industrial

Datasheet:

KTDM4G4B826BGIEAT Datasheet (PDF)

ECAD Model:

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More Information

Learn more about SMARTsemi KTDM4G4B826BGIEAT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SMART
Product Category:	DRAM
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Type:	SDRAM - DDR4
Memory Size:	4 Gbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	1.333 GHz
Package/Case:	FBGA-78
Organisation:	512 M x 8
Supply Voltage - Min:	1.14 V
Supply Voltage - Max:	1.26 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	KTDM
Packaging:	Tray
Brand:	SMARTsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	210
Subcategory:	Memory & Data Storage

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Datasheet

KTDM4G4B826BGIEAT Datasheet (PDF)

CAHTS:: 8542320020
USHTS:: 8542320036
MXHTS:: 8542320299
ECCN:: EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of V_DD = 1.2V ± 5%, and V_PP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).