MMBT5551W_R1_00701

Panjit
241-MMBT5551WR100701
MMBT5551W_R1_00701

Mfr.:

Description:
Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR

ECAD Model:
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In Stock: 29,441

Stock:
29,441 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.243 $0.24
$0.144 $1.44
$0.09 $9.00
$0.066 $33.00
$0.057 $57.00
Full Reel (Order in multiples of 3000)
$0.046 $138.00
$0.041 $246.00
$0.034 $306.00
$0.031 $744.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-323-3
NPN
Single
160 V
180 V
6 V
200 mV
200 mW
300 MHz
- 55 C
+ 150 C
Reel
Cut Tape
MouseReel
Brand: Panjit
Continuous Collector Current: 600 mA
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
DC Collector/Base Gain hFE Min: 80 V at 10 mA, 5 V
DC Current Gain hFE Max: 250 V at 10 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 5 mg
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (VCE) of 160V and a collector current (IC) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.