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NTMYS006N08LHTWG

Name: onsemi NTMYS006N08LHTWG
Brand: onsemi
SKU: 863-NTMYS006N08LHTWG
Price: 4.62 SGD
Availability: InStock

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Mouser No:

863-NTMYS006N08LHTWG

Mfr. No:

NTMYS006N08LHTWG

Mfr.:

onsemi

Description:

MOSFETs T8 80V LL LFPAK

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTMYS006N08LHTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMYS006N08LHTWG

In Stock: 1,454

Stock:: 1,454 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$4.62	$4.62
	$4.49	$44.90
	$3.30	$330.00
	$2.77	$1,385.00
	$2.37	$2,370.00
Full Reel (Order in multiples of 3000)
	$1.60	$4,800.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	7.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	89 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	SIngle
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	8 ns
Forward Transconductance - Min:	99 S
Product Type:	MOSFETs
Rise Time:	125 ns
Series:	NTMYS006N08HL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	40 ns

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Datasheet

NTMYS006N08LHTWG Datasheet

PCN

Material Composition Disclosure

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.