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SCT4045DW7TL

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Mouser No:

755-SCT4045DW7TL

Mfr. No:

SCT4045DW7TL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO263 750V 31A N-CH SIC

Datasheet:

SCT4045DW7TL Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	59 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	63 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	93 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Compliance:	Done
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	10 ns
Forward Transconductance - Min:	9.3 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	5.1 ns
Part # Aliases:	SCT4045DW7

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Datasheet

SCT4045DW7TL Datasheet

Specification Sheets

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SCT4045DW7 N-Ch SiC Power MOSFET

ROHM Semiconductor SCT4045DW7 N-Ch SiC power MOSFET offers low on-resistance of 45mΩ and a fast switching speed. The 750V SCT4045DW7 is simple to drive and easy to parallel. The device is suitable for solar inverters, induction heating, and motor drives.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.