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SI8823EDB-T2-E1

Name: Vishay SI8823EDB-T2-E1
Brand: Vishay Semiconductors
SKU: 78-SI8823EDB-T2-E1
Price: 0.93 SGD
Availability: InStock

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Mouser No:

78-SI8823EDB-T2-E1

Mfr. No:

SI8823EDB-T2-E1

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -20V Vds 8V Vgs MICRO FOOT

Datasheet:

SI8823EDB-T2-E1 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI8823EDB-T2-E1

In Stock: 16,538

Stock:: 16,538 Can Dispatch Immediately

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Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.93	$0.93
	$0.572	$5.72
	$0.366	$36.60
	$0.277	$138.50
	$0.249	$249.00
Full Reel (Order in multiples of 3000)
	$0.212	$636.00
	$0.193	$1,158.00
	$0.182	$1,638.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MicroFoot-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.7 A
Rds On - Drain-Source Resistance:	77 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	40 ns
Forward Transconductance - Min:	6 S
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	SI8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	45.104 mg

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Datasheet

SI8823EDB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541210000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Si88xx 8V TrenchFET® Power MOSFETs

Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chip-scale package, in addition to the first n- and p-channel devices to offer on-resistance (R_DS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package that occupies up to 36 % less board space than the next smallest chip-scale devices, yet offer comparable − and even lower − on-resistance (R_DS(on)).

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.