TGA2237-SM

Qorvo
772-TGA2237-SM
TGA2237-SM

Mfr.:

Description:
RF Amplifier 30-2500MHz 10W GaN PAE > 50% Gain 19dB

Datasheet:
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0

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On Order:
325
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
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Pricing (SGD)

Qty. Unit Price
Ext. Price
$287.34 $287.34
$224.08 $5,602.00

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
RoHS:  
30 MHz to 2.5 GHz
32 V
360 mA
19 dB
Power Amplifiers
SMD/SMT
QFN-32
GaN SiC
33 dBm
- 40 C
+ 85 C
TGA2237
Waffle
Brand: Qorvo
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: TGA2237-SM Eval Board
Input Return Loss: 10 dB
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Pd - Power Dissipation: 19 W
Product Type: RF Amplifier
Factory Pack Quantity: 25
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGA2237
Unit Weight: 188.600 mg
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CNHTS:
8542339000
CAHTS:
8542330000
USHTS:
8542330001
JPHTS:
8542330996
KRHTS:
8532331000
TARIC:
8542330000
MXHTS:
8542330299
ECCN:
EAR99

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.

TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
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