CES MOSFETs

Results: 76
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging

Infineon Technologies MOSFETs N-Ch 650V 25A TO247-3 CoolMOS CP 1In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 600V 31A TO247-3 CoolMOS CP 28In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 16.4 A 199 mOhms - 20 V, 20 V 3.5 V 32 nC - 40 C + 150 C 139 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs N-Ch 650V 21A TO247-3 CoolMOS CP
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 165 mOhms - 20 V, 20 V 3.5 V 39 nC - 55 C + 150 C 192 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 11A TO220-3 CoolMOS CP 500In Stock
500On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 270 mOhms - 20 V, 20 V 2.5 V 29 nC - 55 C + 150 C 96 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 16 A 199 mOhms - 20 V, 20 V 3 V 11 nC - 55 C + 150 C 139 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 500V 23A TO220FP-3 CoolMOS CP Non-Stocked Lead-Time 12 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 23 A 130 mOhms - 20 V, 20 V 3.5 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 550V 23A D2PAK-2 CoolMOS CP Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 23 A 130 mOhms - 20 V, 20 V 2.5 V 64 nC - 55 C + 150 C 192 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 650V 9A TO220-3 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 350 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 550V 17A D2PAK-2 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 17 A 180 mOhms - 20 V, 20 V 2.5 V 45 nC - 55 C + 150 C 139 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs N-Ch 600V 39A TO247-3 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 240
Mult.: 240

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 68 mOhms - 20 V, 20 V 2.5 V 116 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 16A TO247-3 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 16 A 180 mOhms - 20 V, 20 V 2.5 V 43 nC - 55 C + 150 C 139 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 25A I2PAK-3 CoolMOS CP Non-Stocked Lead-Time 12 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 25 A 125 mOhms - 20 V, 20 V 3 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 25mA D2PAK-2 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs N-Ch 500V 13A TO247-3 CoolMOS CP Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 13 A 220 mOhms - 20 V, 20 V 2.5 V 36 nC - 55 C + 150 C 114 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 11A TO220-3 CoolMOS CP Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 270 mOhms - 20 V, 20 V 2.5 V 29 nC - 55 C + 150 C 96 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 25mA D2PAK-2 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs N-Ch 650V 21A I2PAK-3 Non-Stocked Lead-Time 11 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 21 A 165 mOhms - 20 V, 20 V 3 V 39 nC - 55 C + 150 C 192 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 60A TO247-3 CoolMOS CP Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 40 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 431 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 9A TO220-3 CoolMOS CP Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 350 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 11A TO220FP-3 CoolMOS CP Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 11 A 270 mOhms - 20 V, 20 V 2.5 V 29 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 25A TO247-3 CoolMOS CP Non-Stocked Lead-Time 13 Weeks
Min.: 240
Mult.: 240

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 25A TO220FP-3 CoolMOS CP Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 25A TO220-3 CoolMOS CP Non-Stocked Lead-Time 17 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 11A TO220FP-3 CoolMOS CP Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 11 A 270 mOhms - 20 V, 20 V 2.5 V 29 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube