Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).
Features
No reverse recovery charge
Purely capacitive switching
High operating temperature (Tj, max 175°C)
Low turn-off losses
Reduction of CoolMOS™ or IGBT turn-on loss
System efficiency improvement compared to Si diodes
Switching losses independent from load current, switching speed, and temperature
Reduced cooling requirements
Enables higher frequency/increased power density
Higher system reliability due to lower operating temperature
